APPARATUS FOR VAPOR GROWTH OF SEMICONDUCTOR

摘要

PURPOSE:To establish uniform epitaxial growth over the whole wafer by a method wherein a reaction gas inlet tube is provided in such a manner that the tube is movable upwardly and downwardly in a hollow rotary shaft. CONSTITUTION:A hollow rotary shaft 31 is used to support a susceptor 14 provided in a chamber 13 that can be sealed against the air. A cover 30 together with the chamber forming the chamber 13 seals up the lower end of the shaft 31 against the air. The upper part of a reaction gas inlet tube 42 is idly inserted in the shaft 31 and the lower part thereof is allowed to introduce reaction gas 18 from the outside of the cover 30. In line with the conditions under which a gaseous phase is grown, the height (h) of a nozzle 17 is specified in the operational program. According to the instructions thereof or the operator, a driving part 56 is operated to set the nozzle 17 at the preselected height (h) so as to cause the gaseous phase to grow at the proper height (h). An expitaxial layer having uniform thickness can thus be obtained.