| 摘要 |
PURPOSE:To realize high density wiring pattern by forming electrode wiring pattern through selective irradiation of electron beam to photo-sensitive material used as the electrode wiring material. CONSTITUTION:Circuit elements are formed on the one main plane of semiconductor substrate 201 and the surface is covered with an electric insulating film 202. Thereafter, electrode apertures 203a, 203b are formed. Then, a conductive photo sensible resin 204 is deposited on said semiconductor substrate 201 including the electric insulating film 202 and electrode apertures 203a, 203b. After irradiating electron beam to the region on the conductive photo sensitive resin film 204 except for the electrode wiring region, pattern is developed and printed, thereby electrode wirings 204a, 204b consisting of conductive resin film are formed. Thereby, high density electrode wirings can be simply realized. |
