| 摘要 |
PURPOSE:To reduce the component of re-coupling current and prevent the decrease of current gain by a method wherein high density impurity regions at a specific value or more are formed on the surface parts of p type and n type regions of semiconductor layers immediately under the oxide film on semiconductor regions. CONSTITUTION:A p<+> layer 9 is provided on the surface part of the p type layer 3 of a p-n junction reaching the main surface of the semiconductor in a bi-polar type semiconductor integrated circuit device, and an n<+> layer 8 is provided on the surface part of the n type epitaxial layer 2, and the junction surface part between the p type layer 3 and the n type epitaxial layer 2 is formed so that the p<+> layer 9 and the n<+> layer 8 are contacted. It is contrived that the impurity density of each layer 8 and 9 becomes 10<18>cm<-3> or more, and the surface is covered with the oxide film 1. |
