发明名称 SENSING CIRCUIT OF DYNAMIC MEMORY
摘要 PURPOSE:To detect surely a minute quantity of electric charge, by providing a timing circuit consisting of a source capacitor, where the drain and the source are connected commonly, on the bit line of a dynamic storage cell and reading out accumulated information with a high level. CONSTITUTION:An MOSFET 7 is connected between a sense amplifier 4 and a data line 6, and lines led out from a source S and a drain D are connected to a node point (a). When a signal phi0 is given to the gate of a transistor (TR) 2 for information cell to make it conductive, a signal phi1 is given to a gate electrode G of a TR Tr1 to make a TR 7 conductive. When an L-level signal is given to the gate of the TR Tr1, the capacity of a capacitor 8 is changed, and the potential rises, and thus, a minute quantity of electric charge accumulated in a capacitor 3 is detected surely with a high level.
申请公布号 JPS58171787(A) 申请公布日期 1983.10.08
申请号 JP19820053086 申请日期 1982.03.31
申请人 FUJITSU KK 发明人 IWASAKI TOMONOBU
分类号 G11C11/409 主分类号 G11C11/409
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