| 摘要 |
PURPOSE:To enable to easily manufacture a thyristor of large gate trigger current with good reproducibility by a method wherein phosphorus is ion-implanted into the surface of a P2 layer and thermally diffused, after forming four layers of P1-N1-P2-N2. CONSTITUTION:After forming the four layers of P1-N1-P2-N2, phosphorus is ion-implanted, in order to form a layer of density lower than that in the lower part of the emitter N2 layer on the surface of the gate P2 layer 2, and accordingly a P3 layer 8 of low apparent impurity density is formed. Thereat, a thermal diffusion is performed to control the depth of the P3 layer and the surface density. Thereafter, a thyristor is formed through processes of passivation and electrode. |
