| 摘要 |
PURPOSE:To firmly form a charge weir by forming a high carrier concentration area at the specified region through comparatively easy removing and reintroducing processes of Hg atoms at the surface area of substrate utilizing the nature obtained by heat processing of HgCdTe. CONSTITUTION:A HgCdTe substrate 1 adding acceptor impurity in comparatively high concentration is processed under a high temperature in the Hg vapor in view of removing mercury atoms at the surface of substrate 1 in order to form a p<+> type layer 9 in a high carrier concentration. Then, a window W is formed using a mask material 10 and it is subjected to a low temperature heat processing under the Hv vapor. The Hg atoms are diffused at the surface area of the window W. Thereby, the surface area other than the area just under the mask material 10 returns to the p type in the same carrier concentration as the substrate 1 and only the p<+> type layer 11 which works as the charge weir is left. After removing the mask material 10, an insulating film 12 is provided, and moreover a field insulating film 13 is also formed. |
