| 摘要 |
PURPOSE:To relieve a chip having a creative defect, by irradiating the part of the new creative defect of the chip with a laser light and applying a thermal stress to it to confine the creative defect. CONSTITUTION:If a new creative defect (d) exists, the peripheral part including this defect is subjected to the confining treatment to confine the new creative defect, and the influence of the new creative defect upon other areas is prevented. A thermal stress T is applied by irradiation of a laser spot light in the confining treatment, and bubble transfer is possible. Thus, even the chip having the new creative defect is used. |
