发明名称 COMPOUND, RESIN AND PHOTORESIST COMPOSITION
摘要 A composition represented by chemical formula (I). In chemical formula (I), R^1 represents a hydrogen atom or a methyl group; R^2 represents a C1-C12 hydrocarbon group; X^a and X^b represent each independently an oxygen atom or a sulfur atom; X^11 represents a C1-C12 divalent saturated hydrocarbon group, wherein a hydrogen atom of the saturated hydrocarbon group can be replaced with a fluorine atom; and A^1 represents a C1-C12 divalent saturated hydrocarbon group or *-A^2-X^1-(A^3-X^2)_a-A^4-, wherein * represents the binding site with respect to an oxygen atom, A^2, A^3, and A^4 represent each independently C1-C12 divalent hydrocarbon group, X^1 and X^2 represent each independently -O-, -CO-O-, -O-CO- or -O-CO-O-, and a represents 0 or 1. The composition according to the present invention is suitable for ArF excimer laser lithography, EB lithography, and EUV exposure lithography.
申请公布号 KR20160101873(A) 申请公布日期 2016.08.26
申请号 KR20160017993 申请日期 2016.02.16
申请人 SUMITOMO CHEMICAL CO., LTD. 发明人 MASUYAMA TATSURO;SUZUKI YUKI;ICHIKAWA KOJI
分类号 C07D321/06;C07C69/013;C07D307/32;C07D319/04;C08F16/10;C08F16/36;G03F7/00;G03F7/039 主分类号 C07D321/06
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