| 摘要 |
The present invention relates to a wafer support for improving plasma uniformity which embeds a first electrode (20) into a wafer placing surface for plasma generation and embeds a second electrode (30) in a different depth with the first electrode (20) for improving uniformity of the plasma, and thus applying radio frequency (RF) power for generating plasma to the second electrode (30) by a capacitance component between the first electrode (20) and the second electrode (30). |
