| 摘要 |
PURPOSE:To obtain a photoconductive material superior in long wavelength light sensitivity and light fatigue resistance, by forming the first specified layer region and the second photoconductive layer region made of an amorphous material contg. Si on a substrate used for the photoconductive material. CONSTITUTION:A photoconductive material 100 is obtained by forming on a substrate 101, an amorphous layer 102, 1-100mum thick, consisting of the first layer region 103 of 3nm-50mum thickness made of an amorphous material composed mainly of Si and containing H and/or halogen, and contg. Ge and 0.01-5X10<4> atomic ppm element of group III or V of the periodic table governing conductivity characteristics, in a distribution continuous and uniform in the direction of the layer thickness direction and the directions on the plane parallel to the surface of the substate 101, and the second layer region 104 of 0.5-90mum thickness made of an amorphous material composed mainly of Si and containing H and/or halogen. |
