| 摘要 |
PURPOSE:To obtain material with high dry etching resistance for a superior radiation sensitive resist for manufacturing a semiconductor device by using a (co)polymer contg. N-carbazolylalkyl acrylate units as essential polymn. units in the formation of a negative pattern. CONSTITUTION:A polymer of a monomer represented by the formula (where R is alkylene represented by CnH2n and having halogen substituted for >=1 H atom) or a copolymer of the monomer with glycidyl methacrylate or the like is dissolved in cyclohexane or the like, and the soln. is applied to a substrate to form a photosensitive layer. The layer is patterned by irradiating electron beams, and the substrate is dry etched with CF4 gas plasma or the like through the pattern as a mask. Said photosensitive resin causes no postpolymn. and has high dry etching resistance and relatively high sensitivity to electron beams, so the pattern of high accuracy is easily obtd. |
