| 摘要 |
PURPOSE:To obtain a photoconductive material superior in photosensitivity, etc., by adding a conductivity-governing element and oxygen to a photoconductive amorphous layer contg. Si, and Ge distributed unevenly in the layer thickness direction. CONSTITUTION:On a substrate 101, a photoconductive amorphous layer 102 made of amorphous Si(H, X) (X being halogen) contg. Ge unevenly in the layer thickness direction is formed. The layer 102 contains an element for governing conductivity characteristics, such as a p type impurity for giving p type conductivity, i.e., B, Ga, and as an n type impurity, i.e., P or As to optionally control conductivity of the layer 102 in accordance with demand. It also contains oxygen to enhance photoconductivity and dark resistance of the obtained photoconductive material 100 and further to improve adhesion between the substrate 101 and the layer 102. |
