| 摘要 |
PURPOSE:To separate elements without any dimension conversion difference from a resist pattern by a method wherein a window is opened in an insulating film on an Si substrate and an Si single crystal layer with the same thickness as the insulating film is grown in the window to prevent a bird's beak from growing. CONSTITUTION:A resist mask 15 is provided on an SiO2 film 14 on P<+> type Si substrate 13 to open a window by reacting ion etching. A P<-> layer 17 is epitaxially formed on the exposed P<+> substrate to be annealed by means of laser irradiation 19. Gate insulating film 9, poly Si gate 10, source 11, drain 12 are formed on the layer 17 insulated and separated to complete a FET further forming a peripheral circuit of memory cell array such as decorder etc. of DRAM. Through this constitution, an element region with almost similar forming dimension to that of photoresist may be formed improving integration layer and increasing concentration of the substrate consequently preventing soft error due to alpha rays forming DRAM with high performance. Besides the wiring will not be broken as the surface is plain. |
