发明名称
摘要 <p>PURPOSE:To prevent the deterioration of TFT caused by the liquid crystal by providing the insulator film on the surface of TFT. CONSTITUTION:Substrate 1 contains plural units of the gate wire and the source wire along with the thin-film transistor (TFT) array using Te for the semiconductor layer formed at each intersection. And opposite substrate 11 is provided at the position opposing to substrate 1 with transparent conducting film 10 formed. Then liquid crystal component 12 is put between the both substrate, and TFT is protected by insulator film 13.</p>
申请公布号 JPS5845028(B2) 申请公布日期 1983.10.06
申请号 JP19780035635 申请日期 1978.03.27
申请人 SHARP KK 发明人 SHIMIZU KEIICHIRO;NONOMURA HIROSAKU;KISHI KOHEI;MATSURA MASATAKA
分类号 G02F1/136;G02F1/13;G02F1/1333;G02F1/1368;G09F9/00;G09F9/30;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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