| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device and to accelerate and highly integrate it by interposing at least not less than a crystals having a forbidden band width equal to or smaller than a light emitting part or photodetecting part between an operating layer forming an electronic circuit and a light element, thereby eliminating the erroneous operation of an electronic circuit due to the influence of the light by the light element. CONSTITUTION:A buffer layer 32 of GaAlAs crystal, then an active layer Ga1-XAlXAs 33, and then a clad layer 34 are grown on an N<+> type GaAs substrate 31. Then, a Ga1-YAlYAs absorption layer 35 is grown to absorb the light emitted from a laser. The thickness (d) of the layer 35 is selected to satisfy alphad>=1, where alpha represents an absorption coefficient. On the other hand, the composition of the layer 35 is selected so that the Al density is smaller than or equal to the layer 33 of the laser (X>=Y). Zinc is diffused or implanted eventually until reaching the layer 34, and a P type electrode 10 is formed to drive a semiconductor laser. |
