| 摘要 |
PURPOSE:To obtain a light emitting device which has no leakage current and less heating with long lifetime by forming a barrier for stopping an implanting current at the part except the diffused region in a stepwise difference part and employing as a current path the diffused region. CONSTITUTION:A current stopping junction forming n type GaAs layer 12, a current stopping junction forming and clad p type Ga0.7Al0.3As layer 13, an n type GaAs active layer 14, a clad n type Ga0.7Al0.3As layer 15 and an ohmic contact n type GaAs layer 16 are sequentially grown on a P type GaAs substrate, etched to form a stepwise difference, and Zn is diffused to form a p type region 17. An n type side electrode 18 and a p type side electrode 19 are formed. Since the part except the p type region 17 becomes p-n-p-n structure as observed from the substrate 11 side, even if any combination of negative and positive voltages is applied to the substrate 11 and the layer 16, reverse bias part is produced, and no current is flowed. |
