| 摘要 |
PURPOSE:To prevent a junction of a semiconductor device from damaging without reducing a contacting area in the contact between wirings and a substrate by forming an insulating film having a plurality of windows, a buffer layer and a conductive layer. CONSTITUTION:An insulating film 11 having three windows 7'-7''' is formed on an emitter region 6, a polycrystalline silicon film 10 is covered over the windows, and aluminum wirings 8 are formed on the silicon film 10. When a heat treatment is accordingly performed after forming the wirings, the silicon film 10 in the windows 7'-7''' is absorbed to the wirings 8, but polycrystalline silicon 10' on the film 11 around the periphery of the windows is sufficiently supplied into the windows. In this manner, the silicon is sufficiently allowed to remain in the respective windows. Thus, the junction between a base and the emitter is not damaged. |
