| 摘要 |
PURPOSE:To provide high reliability by forming a photodiode with a high density InP as a substrate in a planar type. CONSTITUTION:An N<->-InGaAs or P<->-InGaAs layer 11 of high resistance (<=1X 10<15>cm<-3>) is formed by liquid or vapor phase growth on a high density substrate 10 which exceeds 10<18>cm<-3> of impurity density. Then, a silicon nitrided film 15 is formed, and windows 16-18 for forming a photodiode, and the source and drain regions of a field effect transistor are opened. Then silicon ion are implanted. An MIS type gate is eventually formed with Cr/Au on the metal electrode 23 of the gate of the transistor, and an ohmic contact is formed with Au/ Ge at the metal electrodes 21, 25 and 22, 24 of the drains 19, 20, thereby constructing a light composite semiconductor element. |
