| 摘要 |
PURPOSE:To perfectly prevent the contamination of movable ions from a gate electrode by a method wherein the first insulation film, an impurity blocking film, and the second insulation film containing the element for movable ion fixing are laminated on the surface of a semiconductor, and electrodes are provided thereon, when an MOS type gate part structure having electrodes constituted of a high melting point metal or its silicide is manufactured. CONSTITUTION:A thick field SiO2 film 22 is formed in the periphery of a one conductivity type Si substrate 20, and the thin SiO2 gate insulation film 23 is adhered on the surface of the substrate 20 surrounded thereby. Next, both thin Si3N4 film 24 and SiO2 film 25 are produced by lamination over the entire surface including it, and then P or Cl fixing movable ions is diffused into the film 25. Thereafter, the high melting point metal such as Mo is deposited on the film 25 by a sputtering or an electron beam evaporation, and selectively etched into the gate electrode 26. Then, in the substrate 20, a source and a drain regions 21 which have conductivity type reverse thereto are provided by an ion implantation, etc., then covered with an SiO2 film 27, opening a window, and thus Al/ Si electrodes 28 and 29 are mounted respectively on the regions 21. |
