| 摘要 |
PURPOSE:To prevent the breakdown of memory due to external noises by a method wherein the voltage of a word line is raised up momentarily over a power source voltage, and thus the voltage level of writing information is enlarged, in a MIS static RAM immediately after writing. CONSTITUTION:A high voltage supplying circuit HVS is formed of transistors (TR) Q25-Q31, a capacitor C1, and a delay circuit DL, and connected to a line driver RB joined to a line decoder RD. A transfer gate for array selection wherein P and N type TR Q15, Q16, Q17 and Q18 are in parallel is provided between the pair of bit lines BL and the pair of data buses DB, and a writing circuit WTC' is formed of an inverter by using P type TR Q23 and Q24 for the load of the BL pair. By this contitution, the voltage of the word line WL is raised up momentarily to a potential over Vcc after finish or wristing. Thereat, since the voltage of the bit line-BL is raised up to approx. Vcc, the voltage of the node B in a memory cell MC is raised up rapidly to approx. Vcc after finish of writing, and accordingly the breakdown of memory due to external noises is difficult to occur. |
