LUMINESCENT DIODE ADAPTED AS PRESSURE SENSOR

摘要

A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized in that, for the purpose of pressure-dependent brightness of the light radiation, the composition of the light-active zone at the pn junction comprises a semiconductor material which has a composition which corresponds to a position close to the transition from a direct energy gap to an indirect energy gap and at which a change of the composition would result in a significant change in the brightness of the emission. The invention is particularly useful for potential-free measurement of pressure forces.