| 摘要 |
PURPOSE:To form a boundary surface which is chemically stable, has less distortion and good electrical and optical properties between active regions by forming II-VI group compound semiconductor insulating film having substantially equal crystalline confiburation and grating constant to those of the active region of II-V group compound semiconductor on the active region. CONSTITUTION:A GaAs film 5 of several mum thick is epitaxially grown on an insulating (001) GaAs substrate 4, etched with a mixture of sulfuric acid, hydrogen peroxide water and water, thereby treating the surface. Then, the surface temperature of GaAs 5 is held in the range of 370 deg.C+ or -80 deg.C in vacuum higher than 2X10<-6>Torr, and ZnSe crystal insulating film 6 is formed by molecular beam epitaxial method in approx. 1-5mum thick. The conditions of this time are that the molecular beam intensity ratio of Zn to Se is approx. 1, and the growing velocity is 1mum/hr. Then, SiO2 is sputtered with a mask, thereby forming an insulating film 7 of SiO2 at the prescribed position. Then etching with a mixture of hydrochloric acid and nitric acid is performed, thereby removing ZnSe crystal of electrode forming part, and a source electrode 8, a gate electrode 9 and a drain electrode 10 are eventually formed. |
