| 摘要 |
PURPOSE:To improve the current amplification factor of a high current region and to enable to integrate a semiconductor in the reduction of the size of a pattern by forming the base region in a lateral transistor having one conductive type base region formed across an emitter region and a collector region on the surface of conductive type semiconductor region in a high impurity density higher than the one conductive type semiconductor region. CONSTITUTION:P type regions which form an emitter region 12 and a collector region 13 are respectively formed in an N type region formed in an epitaxial wafer 11. Subsequently, N<+> type impurity of high density is diffused in a depth shallower than the P type regions across the two P type regions to form an N<+> type base region 14. The impurity N of the region 14 and the impurity density P in the P type region have a region of N>P, to be formed in a depth as shallow as possible with the region sufficient to form a base electrode 18. An emitter electrode 16, a collector electrode 17 and a base electrode 18 are formed. In this manner, the flow of a base current becomes short, thereby reducing the base resistance and improving the current amplification factor in the high current region. |
