| 摘要 |
PURPOSE:To obtain a dried simple process containing no etching treatment while miniaturizing the elements of a semiconductor layer by selectively implanting ions into an isolation region between the elements and forming an oxide film to the isolation region and the surface of the semiconductor layer through thermal oxidation. CONSTITUTION:When the semiconductor layer 2 is grown onto an insulating substrate 1 in an epitaxial manner, a resist film 3 is applied and the isolation region between the elements is patterned and ions are implanted into the isolation region A, the speed of oxidation of the isolation region A increases. When the resist film 3 is removed and the oxide film 14 is formed to an ion implanted region and the surface of the semiconductor layer 2 through thermal oxidation treatment, oxidation advances up to a section, which is in contact with the substrate 1, of the semiconductor layer 2 because the speed of oxidation is large in the ion implanted region, but the oxide film is formed only in the vicinity of the surface of the semiconductor layer 2 because the speed of oxidation is small in a section to which ions are not implanted, thus attaining isolation between the elements. Since a wiring metal 15 can be joined with the wall surface C of the semiconductor layer 2 crossing with the substrate 1 at an angle, an element section S' required for electrical contact may be small, and density can be increased. |
