| 摘要 |
PURPOSE:To enable to perform a plan depositing wiring by forming an ion implanted layer by implanting beryllium ions on a low density layer, and forming a field effect transistor on an ion implanted layer, thereby enhancing the reliability as a communication element. CONSTITUTION:An N type InGaAs layer 5 is formed on a substrate 4 of an N<+> type InP layer, and a silicon nitrided film 10 is formed on a low density layer made of the layer 5. A hole 15 is opened at the nitrided silicon layers 10, 14, and a window 16 of the electrode forming part of a photodiode is opened. Further, beryllium (Be) ions are implanted to the transistor part, which is then heat treated, thereby forming a P type layer 17 to isolate it from the low density layer 5. The photodiode part employs Au/Zn as a metal electrode 22, and Au/Ge metal electrodes 24 for a source 20, a drain 21 and a substrate 4, contactings are performed, and mounted in a package. |
