CONTACT SYSTEM FOR POWER THYRISTOR

摘要

1. Contact system for a pressure-contactable power thyristor, which bears a branched gate structure and metallizations (13a, 13b) on an active silicon block (12) in the emitter region (1) and in the gate region (2), wherein a contact plate (14), which comprises a flat underside and a bore for the insulated passage of a control connection for a central gate (2a), is mounted on the silicon block (12) for the purpose of pressure-contacting, characterized in that a ductile metal disc (15) with openings (16) corresponding to the gate structure and a bore for the passage of the control connection for the central gate (2a) is inserted between the silicon block (12) and the contact plate (14), and that the positioned ductile metal disc (15) is fixed by means of a resilient plastics material at the surrounding edge.