发明名称 IMPROVED ELECTRONIC DEVICE HAVING MULTILAYER WIRING STRUCTURE
摘要 <p>An improved electronic device having a multilayer wiring structure is provided. The interlayer insulation layer or at least one of the interlayer insulation layers, formed between metal wiring layers, is comprised of a cured coating of a ladder-type silsesquioxane polymer. A layer for protecting a metal wiring layer or layers may also be comprised of a cured coating of a similar polymer. The specified cured coating exhibits good resistance to heat and moisture and enhanced levelling on a pattern.</p>
申请公布号 EP0021818(B1) 申请公布日期 1983.10.05
申请号 EP19800302103 申请日期 1980.06.23
申请人 FUJITSU LIMITED 发明人 TAKEDA, SHIRO;NAKAJIMA, MINORU
分类号 H01F10/30;H01L21/312;H01L21/768;H01L23/29;H01L23/532;(IPC1-7):01L23/52;01F10/30 主分类号 H01F10/30
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