发明名称 |
IMPROVED ELECTRONIC DEVICE HAVING MULTILAYER WIRING STRUCTURE |
摘要 |
<p>An improved electronic device having a multilayer wiring structure is provided. The interlayer insulation layer or at least one of the interlayer insulation layers, formed between metal wiring layers, is comprised of a cured coating of a ladder-type silsesquioxane polymer. A layer for protecting a metal wiring layer or layers may also be comprised of a cured coating of a similar polymer. The specified cured coating exhibits good resistance to heat and moisture and enhanced levelling on a pattern.</p> |
申请公布号 |
EP0021818(B1) |
申请公布日期 |
1983.10.05 |
申请号 |
EP19800302103 |
申请日期 |
1980.06.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEDA, SHIRO;NAKAJIMA, MINORU |
分类号 |
H01F10/30;H01L21/312;H01L21/768;H01L23/29;H01L23/532;(IPC1-7):01L23/52;01F10/30 |
主分类号 |
H01F10/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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