| 摘要 |
<p>In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled pressure of the vapor, while maintaining the growth temperature at a constant value by relying on, for example, a temperature difference technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be formed in the grown crystal easily as desired.</p> |
