发明名称 |
Profile control photoresist |
摘要 |
Anisotropic etching of thick photoresist under plasma conditions to achieve a vertical side wall with or without undercutting is accomplished by operating at a low excitation frequency, a pressure in the range of 0.3 to 2 Torr and a controlled concentration of active species.
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申请公布号 |
US4407850(A) |
申请公布日期 |
1983.10.04 |
申请号 |
US19820338752 |
申请日期 |
1982.01.11 |
申请人 |
THE PERKIN-ELMER CORPORATION |
发明人 |
BRUCE, RICHARD H.;REINBERG, ALAN R. |
分类号 |
G03F7/09;G03F7/36;H01L21/311;(IPC1-7):B05D1/36;B05D3/04 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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