发明名称 Profile control photoresist
摘要 Anisotropic etching of thick photoresist under plasma conditions to achieve a vertical side wall with or without undercutting is accomplished by operating at a low excitation frequency, a pressure in the range of 0.3 to 2 Torr and a controlled concentration of active species.
申请公布号 US4407850(A) 申请公布日期 1983.10.04
申请号 US19820338752 申请日期 1982.01.11
申请人 THE PERKIN-ELMER CORPORATION 发明人 BRUCE, RICHARD H.;REINBERG, ALAN R.
分类号 G03F7/09;G03F7/36;H01L21/311;(IPC1-7):B05D1/36;B05D3/04 主分类号 G03F7/09
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