| 摘要 |
PURPOSE:To make it possible to prepare not only a solar battery utilizing a stainless steel substrate bus also an amorphous semiconductor device having excellent characteristic by supressing dangling bond of amorphous semiconductor mainly composed of 4-coordination element through combination of terminators having different coordination trends of 1-, 2- and 3- coordinations. CONSTITUTION:An amorphous semiconductor is composed of an element belonging to the 4B group in the periodic table as main element and each of the hydrogen or an element belonging to any of 7B group or 1A group, an element belonging to any of the 6B group and 2A group and an element belonging to any of the 5B group and 3A group as the sub-element. A p type layer 2 is formed on the stainless steel substrate 1 of which surface has been polished and the layer 2 is formed on the substrate heated by the glow discharge decomposition. In case a mixed gas (N2/SiH4=O2/SiH4=1%) of (SiH4+N2+O2) is used as the gas material, a-Si.H.O.N layer containing a 2-coordination element is also gennerated. Performance of obtained a-Si.H.O.N solar battery is improved. |
