| 摘要 |
PURPOSE:To make the design of a photometric mode easy, by using the structural characteristic of an amorphous silicon photodiode, and disposing a photometric element in the position where the photographing light passing through a photographic lens and directing to the exposure plane of a film can be detected. CONSTITUTION:A glass base body 8 corresponds to the glass in the rear part of a reflecting mirror, the roof part of a pentagonal prism or the front part thereof. A vapor deposited surface 9 of aluminum or silver and a coating layer 10 for a semitransparent mirror are provided on the surface of the body 8. An a-Si photodiode 11 is formed on the layer 10, and according to the magnified part thereof, the part of the photodiode 11 consists of a transparent conductive layer 13, a P layer 14, an i layer 15, an N layer 16 and a vapor deposited layer of aluminum or silver. The thickness of the photodiode 11 is about 1mu and about several mu including the thickness of the coating layer for a semitransparent mirror. |
