| 摘要 |
PURPOSE:In preparing a single crystal of a III-V group compound by horizontal boat growing process, to obtain a single crystal having low etch pits density in high yield, by using a quartz boat having a flat bottom and a quartz reaction pipe having a flat face to place the boat. CONSTITUTION:The quartz boat 4 having a flat bottom, putting a III-V group compound (e.g., GaAs) in it, is placed on the quartz reaction pipe 5 having a flat face to place the quartz boat 4, the reaction pipe 5 is heated from the outer periphery so that the GaAs melt 3 is produced in the quartz boat 4, and it is made into a single crystal with annealing it. Consequently, since the outside reaction pipe 5 is closely attached to the quartz boat 4 without space between them, the heat for heating the reaction pipe 5 is uniformly transferred to the GaAs melt 3, to give a single crystal having low etch pits density. Since the single crystal with a square section is prepared, the yield and efficiency in preparing semiconductors are improved. |
