发明名称 READ ONLY MEMORY AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable to manufacture and to ship the ROM in a short time after decision of informations to be fixed, and to obtain the ROM having favorable efficiency and high reliability by a method wherein the ROM having no written fixed-informations is manufactured, and after then a PSG cover film and Al wiring bodies are selectively etched to be removed according to mask patterns formed for every fixed-informations. CONSTITUTION:The whole electrode windows for sources 16, drains 17 and gates 18 are formed regardless of informations to be fixed, an Al contact electrode 19 is formed, and the ROM in which the whole bits attained contact with bit lines is formed. Then the PSG cover film 21 is formed, and after the opening treatment of windows for bonding pads and the back treatment are performed, and a resist film 23 is applied, patterning is performed by the electron beam exposure method according to window opening data formed from written informations, and then opening of the windows and cutting of the Al wiring bodies 22 are performed according to dry etching. After then, a thermal treatment and Au evaporation are performed to complete the ROM.
申请公布号 JPS58166760(A) 申请公布日期 1983.10.01
申请号 JP19820050736 申请日期 1982.03.29
申请人 FUJITSU KK 发明人 SHIRATO TAKEHIDE
分类号 G11C17/00;G11C17/08;H01L21/8246;H01L27/112 主分类号 G11C17/00
代理机构 代理人
主权项
地址