| 摘要 |
<p>PURPOSE:To ensure a high degree of integration without requiring any high- accuracy processing, by using a fused ROM consisting of a molybdenum nitride or tungsten nitride thin film at the part to be brokendown on conduction. CONSTITUTION:An Mo wiring layer 23 is formed on a silicon nitride film 12 on an inter-layer insulating film 11 after an active region of an npn transistor is formed. Then the Mo film is scraped through an open hole 27 of a silicon oxide film which is coated on the layer 23. Furthermore the Mo film is nitrided in a gaseous ammonia to obtain an Mo nitride film 28. The specific resistance of the Mo film is extremely increased with the film 28. As a result, a high degree of integration is possible without reducing the width of the wiring at the part to be a fuse.</p> |
