| 摘要 |
<p>PURPOSE:To prevent the generation of the crack, break, split, etc. of a semiconductor board in case of cutting and division simply by previously forming a metallic layer to a dividing section in the case when the semiconductor board is divided into chips through scribing, etc. CONSTITUTION:The semiconductor board is scribed or division in dividing surfaces 6 together with the metallic layers 7. Accordingly, stress in case of cutting is absorbed to the metallic layers 7 because a silicon board is coated with aluminum, nickel or Cr-Ni-Au 3 in the dividing sections, cracks, breaks, etc. are not generated, and the complete diode chips shown in the figure can be obtained. The metallic layers 7 can be formed at the same time as electrode layers 3, only patterns for removal through masking in case of evaporation or etching after evaporation are changed, and excessive processes need not be added, thus executing the method extremely simply.</p> |
