| 摘要 |
PURPOSE:To prevent sticking, by subjecting a photomask base itself also to patternwise etching and reducing contact area with a wafer during bringing the mask into contact with the wafer. CONSTITUTION:A metallic film 2 and a photoresist layer 3 are formed on a mask base 1 of glass, exposed and developed to form a resist pattern. Then, etching grooves 1A are formed on the base 1A to a prescribed depth in the same pattern as that of the film 2 also on the side of the film 2 and the base 1, the photoresist layer 3 is stripped to obtain a photomask having the etched grooves 1A on the base 1 itself. As shown in the figure, the length T is far longer than the film 2 alone, when the mask is brought into close contact with a wafer, gaps having nearly T in distance are formed in the grooves 1A, phenomenon of sticking caused by contact of the wafer with the bottoms of the grooves 1A is prevented. |
