| 摘要 |
PURPOSE:To obtain the magnetoelectricity converting element having excellent thermal conductivity, high productivity and excellent sensitivity by a method wherein a semiconductor thin film using a high mobility semiconductor material is formed on an Al2O3 film which was formed on a substrate of excellent thermal conductivity. CONSTITUTION:As an IC, an Si substrate, which is used for LSI, and an Si polycrystalline substrate, are used as a substrate, it has an extremely excellent thermal conductivity and as a result, almost no temperature rise of an element is observed. An SiO2 film 10 and an Al2O3 film 11 are provided on the surface of said Si substrate 9, and as a semiconductor thin film 2 is formed thereon, the cristalization of the semiconductor thin film 2 can be improved remarkably. In the case of an InSb film, for example, its speed of mobility reaches as high as 30,000cm<2>/Vsec or thereabout, thereby enabling to obtain a highly sensitive element. |
