| 摘要 |
PURPOSE:To obtain a high sensitivity infrared-ray detecting element by a method wherein the warp of an energy band structure is formed in such a manner that an excitation majority carrier will not be diffused on the side of surface layer by forming an oxide film on a high purity epitaxial crystal surface. CONSTITUTION:After a P type GaAs epitaxial crystal 2 has been grown on a Cr-doped high resistance GaAs crystal substrate 1 by performing a vapor growth method or a liquid growth method, a surface oxide film 5 (a silicon dioxide film, for example) is formed. In this instance, said silicon dioxide film is formed by performing a spin-ON method, wherein a silica film is used, or a chemical vapor growth method. Then, an ohmic electrode 3 is formed and a GaAs far infrared- ray element is formed. |
