| 摘要 |
PURPOSE:To enable the device to be applied for a high reliable product, especially for a plastic molded semiconductor product for an an automobile by a method wherein the surface of a substrate is covered with a high minute and rigid film as the surface protective film, while a film consisting of a matter having favorable adhesion is made to be interposed between a plastic molding and the high minute and rigid film. CONSTITUTION:A semiconductor region to constitute a semiconductor element is formed in the main surface of a semiconductor Si substrate 1 according to the well-known impurity selective diffusion method. A part of a surface oxide film 2 is used as the mask when selective diffusion is to be performed, and is used as the insulating groundwork film for Al electrodes and wirings to be formed thereon. The numerals 3 show the Al electrodes (or the wirings), and a part thereof is used as the pad part for wire bonding. The numeral 5 shows the high minute and rigid insulating film, and is the film obtained by forming an Si3N4 (nitride) film deposited using plasma discharge at about 1mum thickness. The numeral 4 shows the film obtained by forming a PSG (silicate glass containing phosphorus) film formed as the final passivation film at about 1mum-0.2mum thickness. |
