发明名称 MOISTURE SENSOR AND METHOD OF PRODUCING SAME
摘要 <p>A moisture sensor comprises a moisture-sensitive layer formed from the oxide of highly resistive porous low density tantalum on a moisture-insensitive substrate. Between the substrate and the moisture-sensitive tantalum oxide layer there is a base electrode of an anodically oxidizable metal, preferably tantalum, of a density higher than the density of the low density tantalum from which the tantalum oxide layer is formed. A covering electrode partially covering the tantalum oxide layer has windows through which the water vapor containing medium can penetrate into the moisture-sensitive tantalum oxide layer. The inactive regions of the tantalum oxide layer disposed below the windows are removed to increase the rate of response.</p>
申请公布号 JPS58165313(A) 申请公布日期 1983.09.30
申请号 JP19820227189 申请日期 1982.12.27
申请人 ENDORESU UNTO HAUZAA GMBH UNTO CO 发明人 ERUNSUTO RIYUUDAA;TORAUGOTSUTO KARUFUASU;KURISUCHIAN BORUKUBUARUTO
分类号 H01C7/00;G01N27/12;G01N27/22;H01G7/00 主分类号 H01C7/00
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