发明名称 |
MOISTURE SENSOR AND METHOD OF PRODUCING SAME |
摘要 |
<p>A moisture sensor comprises a moisture-sensitive layer formed from the oxide of highly resistive porous low density tantalum on a moisture-insensitive substrate. Between the substrate and the moisture-sensitive tantalum oxide layer there is a base electrode of an anodically oxidizable metal, preferably tantalum, of a density higher than the density of the low density tantalum from which the tantalum oxide layer is formed. A covering electrode partially covering the tantalum oxide layer has windows through which the water vapor containing medium can penetrate into the moisture-sensitive tantalum oxide layer. The inactive regions of the tantalum oxide layer disposed below the windows are removed to increase the rate of response.</p> |
申请公布号 |
JPS58165313(A) |
申请公布日期 |
1983.09.30 |
申请号 |
JP19820227189 |
申请日期 |
1982.12.27 |
申请人 |
ENDORESU UNTO HAUZAA GMBH UNTO CO |
发明人 |
ERUNSUTO RIYUUDAA;TORAUGOTSUTO KARUFUASU;KURISUCHIAN BORUKUBUARUTO |
分类号 |
H01C7/00;G01N27/12;G01N27/22;H01G7/00 |
主分类号 |
H01C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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