| 摘要 |
PURPOSE:To obtain a pattern having high precision and favorable yield by a method wherein a metal element layer having the desired pattern is formed on a semiconductor substrate according to the irradiation of an ion beam, and the plasma etching process is performed using the layer thereof as the mask. CONSTITUTION:The semiconductor substrate 13 is accommodated in a vacuum vessel 12 whose inside is formed in the vacuum condition according to an exhaust tube 11, and the metal element layer 16 is formed on the substrate 13 according to the metal element ion beam 15 sent from a converging ion beam source 14 positioned at the upper part of the substrate thereof. At this time, Si is used for the substrate 13, and moreover Al ions are used for the ion beam 15. Then gas 18 for plasma etching consisting of CF4 is sent in the vessel 12 through a leading-in tube 17, the inside of the vessel 12 is converted into the plasma condition according to a high-frequency coil 19 provided at the outside circumference of the vessel 12, and the recessed part of the desired pattern is generated in the substrate 13 using the element layer 16 as the mask. |
