| 摘要 |
PURPOSE:To obtain the semiconductor device in high degree of integration by a method wherein SiO is filled in the groove provided on a semiconductor substrate in advance, and the narrow gap generated between th SiO and the wall surface of the groove is filled up with SiO2 by heating up a polysiloxan film, thereby enabling to flatten the surface of the substrate and to increase the accuracy in isolation. CONSTITUTION:The prescribed region of the semiconductor substrate is covered by a resist film, a groove 3 is provided on the substrate 1 by performing an ion etching using Ar gas, and an SiO film 4, which is disconnected inside the groove 3 and on the film 2, is formed using SuO powder as the source of vapor-deposition while the film 2 is being left. Then, the substrate 1 is dipped in boiling sulfuric acid, the film 2 is removed together with the film 4 located above the film 2, the SiO film 4 remaining in the groove 3 is converted to a chemically and thermally stabilized SiO2 film 5 by performing a heat treatment in an oxygenous atmosphere and, at the same time, an SiO2 film 6 is formed on the surface of the substrate 1. Subsequently, an ethanol solution of tetraethoxysilane polymer is applied on the substrate 1, a polysiloxan film 7 is formed by performing a heat treatment, the gap between the groove 3 and the film 5 is filled up by a film 7, and the film 7 is converted to an SiO2 film 8 by performing a heat treatment again. |
