| 摘要 |
PURPOSE:To aim at processing a high-quality semiconductor ever so speedily without any damage to that product, by using a convergent ion beam through which processing, observation and reconditioning for a sample are all conducted in regular sequence under the same high vacuum. CONSTITUTION:A sample (semiconductor wafer) secured to a transfer cradle 10 inside a sample feed chamber 2 via a piezoelectric transducer 11 is transferred to the inside of a vacuum sample processing chamber 1 and secured to the specified position. After radiating with an ion beam out of an ion beam generating part 15 and forming plural pieces of adjusting patterns 35, the ion beam 30 is radiated to the sample and thereby etching the specified pattern is carried out in a maskless manner. Next, when an electron beam 37 out of the electron beam generating part 16 is radiated along a processing part (groove) 48, the thermal stress of a damaging spot increases in the processing part, which is therefore detected by the transducer 11 so that the degree of damage and deformation as well as space distribution in the sample become clear. Then, laser beams out of a laser beam generating part 17 are radiated along the processing part 48 and a defect in the foregoing processing outer layer is thermally reconditioned. The sample that gets through the processing and reconditioning is thus taken out via a delivery chamber 3. |
