| 摘要 |
The method comprises a maskless technique for plating a protective metal layer (5) on an existing metallurgical pattern (2, 4) supported on a dielectric substrate (1) by blanket coating said metal layer (5) over said substrate (1) and said pattern (2, 4), heating to diffuse the metal of said layer (5) into said pattern (2, 4) and cooling to spall the metal layer (5) on the non-patterned portion of the substrate surface, and mechanically removing the metal layer (5) from the non-patterned substrate surfaces. Optionally, the metal layer (5) can also be blanket coated with a passivating metal film (10) with interdiffusion therebetween at the interface during the noted heating step. …<??>The method is useful for forming protected metal coatings on refractive metal conductive patterns on ceramic substrate carriers employed for mounting semiconductor devices thereon. |
