| 摘要 |
PURPOSE:To obtain PIN<->N or PP<->IN structure having high conversion efficiency of the device when an N type non-single crystal semiconductor layer is to be provided on a forming face according to the plasma vapor phase growth method by a method wherein carbide gas or halogenide gas of antimony is added to reactive gas, and Sb, Si, Ge, SiC, Si3N4 are used as N type impurities. CONSTITUTION:Electrodes 51, 52, 53 are provided mutually facing respectively in reaction chambers 25, 26, 27, and substrate 1 of the plural sheets are arranged between them in the vertical direction interposing an interval between them. Valves 5, 6, 7, 8 are connected to the reaction chamber 25, valves 9, 10, 11, 12 are connected to the reaction chamber 26, and moreover valves 13, 14, 15, 16 are connected to the reaction chamber 27. Infrared heating energy waves 4 and high- frequency electric discharge 3 are applied between the electrodes forming respectively a pair, and SiH2 is supplied to the valves 5, 9, 13, Ga(CH3)3 is to the valve 6, Sb(CH3)3 is to the valve 14, carrier gas of H2 is to the valves 8, 12, 16, CH4 is to the valve 7, and NH3 is supplied to the valve 15 respectively to obtain the desired N type non-single crystal layer. |
