发明名称 HALL EFFECT SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain a Hall IC which has simple structure and high sensitivity by commonly using an IC package material and a bias magnet. CONSTITUTION:The material of a bias magnet 4 may be made of a ferrite magnet, but employs a material which has large impact resistance and large degree of freedom in shape such as a plastic magnet or a rubber magnet, and the magnet 4 is used also as a package as it is. When a chip 3 is bonded and connected via wirings 8, an intermediate inspection is performed, and the thickness of the magnet 4 is adjusted and mounted to the value of the magnetic field when the polarity and output voltage of a Hall element is switched to a low level. A bias magnet 4' is also mounted on the back surface of the substrate, or epoxy resin 11 is covered, and the magnet 4 may be provided on the outside. According to this configuration, a Hall element which operates in a magnetic field lower than the conventional one and has high sensitivity can be obtained inexpensively.
申请公布号 JPS58164262(A) 申请公布日期 1983.09.29
申请号 JP19820048456 申请日期 1982.03.24
申请人 SHARP KK 发明人 SUZUKI HIROSHI
分类号 H01L27/22;H01L43/04 主分类号 H01L27/22
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