| 摘要 |
PURPOSE:To provide by a normal crystal growing method a relatively readily thin active region by employing two adjacent blade-shaped mesas instead of the provision of the groove on a semiconductor substrate. CONSTITUTION:The growth is accelerated at the mesa side surface (111) and the growing solution is absorbed to the side surface in the mesa (100) surface having narrow width, and the growing speed of the (100) surface of 0 or negative. When the mesa having narrow width is disposed adjacently, a crystal is not, if the crystal is grown to the top of the mesa, grown. Further, the crystal growing speed between two blade-shaped mesas is later than the case of the buried mesa groove. This is because the growing speed of the other outside of the (111) or (-111) exposed between the two blade-shaped mesas is fast, and the solute in the growing solution is dispersed to stop the fast growing speed between the two mesas. A bias layer or a high resistance layer 6 is formed in the region disposed between the mesas, thereby narrowing the current. According to this structure, a thin InGaAsP active layer 3 is formed with good controllability on the InP substrate 1, thereby obtaining a preferable buried type laser device. |
