| 摘要 |
<p>PURPOSE:To obtain an excellent abrasion-resisting film in a short time by a method wherein an oxidation-resisting layer and an abrasion-resisting layer on a heating resistor made of tantalum nitride are formed of a two-layer film of a plasma-oxidized film and a plasma oxynitride film by plasma CVD. CONSTITUTION:A heating body of a thermal head is formed of a tantalum nitride layer 3, and an oxidation-resisting layer to be provided thereon is formed of a plasma-oxidized film 5, while an abrasion-resisting layer is formed of a plasma oxynitride film. When a plasma CVD method is applied, an SiO film and an SiN film are formed at a film-forming temperature of 250-300 deg.C on a substrate whereon they are desired to be formed. In addition, the speed of forming the SiO film is about 500Angstrom /min, and that of forming the SiN film is about 300Angstrom /min. These are about six times and 1.3 times higher than those obtained when an RF spattering method is applied. The SiO film can be formed in a gas system of SiH4+N2O, and the SiN film in a gas system of SiH4+NH3+N2. In order to prevent the SiN film from cracking, it is formed into an SiON film by introducing oxygen (about 10% in a system of N2O/NH3+N2O).</p> |
