Method of forming fusible links in a semiconductor device.

摘要

A method of producing a semiconductor device provided with a fuse comprises the steps of forming a fuse layer (34) on an insulating layer (32) lying on a semiconductor substrate (31); forming an interrupting layer (40) covering the fuse layer and the insulating layer; forming an insulating protective layer (43) covering the interrupting layer; selectively etching the protective layer, so as to form a partial window (55), with a suitable etchant which does not etch the interrupting layer (40); and etching the exposed interrupting layer to complete the window (56) through which a portion of the fuse layer (34) and a portion of the insulating layer (32) are exposed. The insulating layer (32) is not removed, so that the reliability of the semiconductor device will not deteriorate.