| 摘要 |
<p>PURPOSE:To improve the reliability of semiconductor memories, by installing transistors to be used for selecting standby memory cells between a decoder for selecting cells and standby memory cells and by switching a regular memory cell to a standby memory cell by controlling the opening and closing of the transistors. CONSTITUTION:When, for example, a trouble occurs in a memory cell to be connected to a driving line W1, the fuse element P1 in the circuit C1 is cut by a laser. A transistor 161 is turned off and a transistor 121 is turned on by means of a transistor 151, and then, a decoder output R1 and a point B1 are connected with each other and a standby memory cell is selected. Therefore, the reliability of the semiconductor memory can be improved with a simple measure that is cutting of one fuse only.</p> |
